The continuous advancement of Very Large-Scale Integration (VLSI) technology has been primarily driven by the scaling of Complementary Metal-Oxide-Semiconductor (CMOS) devices. For several decades, Moore’s Law has enabled exponential growth in transistor density, leading to remarkable improvements in computational performance and energy efficiency. However, as CMOS technology approaches the sub-5 nm regime, several fundamental challenges such as short-channel effects, leakage currents, process variability, power density, and quantum mechanical limitations have become increasingly significant. These challenges threaten the sustainability of conventional transistor scaling and necessitate the development of innovative design methodologies and emerging device architectures. This paper presents a comprehensive review of advanced CMOS scaling challenges, surveys recent research developments, and proposes an adaptive multi-gate CMOS framework aimed at improving performance, reliability, and energy efficiency in nanoscale VLSI systems. The proposed methodology incorporates FinFET-based structures, high-k dielectric materials, and intelligent power optimization techniques. Simulation-based analysis demonstrates improvements in transistor performance, reduced leakage power, and enhanced scalability for future integrated circuits. The study concludes that advanced device engineering and architectural innovations are essential to extend CMOS technology beyond conventional scaling limits.